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insulated gate bipolar transistor withultrafast soft recovery diode irg7ph35udpbf IRG7PH35UD-EP 1 www.irf.com 02/08/10 e g n-channel c features low v ce (on) trench igbt technology low switching losses square rbsoa 100% of the parts tested for i lm positive v ce (on) temperature co-efficient ultra fast soft recovery co-pak diode tight parameter distribution lead-free benefits high efficiency in a wide range of applications suitable for a wide range of switching frequencies due to low v ce (on) and low switching losses rugged transient performance for increased reliability excellent current sharing in parallel operation applications u.p.s. welding solar inverter induction heating gc e gate collector emitter to-247ac irg7ph35udpbf to-247ad IRG7PH35UD-EP g c e c g c e c v ces = 1200v i nominal = 20a t j(max) = 150c v ce(on) typ. = 1.9v absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 1200 v i c @ t c = 25c continuous collector current 50 i c @ t c = 100c continuous collector current 25 i nominal nominal current 20 i cm pulse collector current, v ge =15v 60 i lm clamped inductive load current, v ge =20v 80 i f @ t c = 25c diode continous forward current 50 i f @ t c = 100c diode continous forward current 25 i fm diode maximum forward current 80 v ge continuous gate-to-emitter voltage 30 v p d @ t c = 25c maximum power dissipation 180 p d @ t c = 100c maximum power dissipation 70 t j operating junction and -55 to +150 t stg storage temperature range soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) thermal resistance parameter min. typ. max. units r jc (igbt) thermal resistance junction-to-case-(each igbt) CCC CCC 0.70 r jc (diode) thermal resistance junction-to-case-(each diode) CCC CCC 0.65 r cs thermal resistance, case-to-sink (flat, greased surface) CCC 0.24 CCC r ja thermal resistance, junction-to-ambient (typical socket mount) CCC 40 CCC c/w a w c downloaded from: http:///
irg7ph35udpbf/IRG7PH35UD-EP 2 www.irf.com notes: v cc = 80% (v ces ), v ge = 20v, r g = 50 ? . pulse width limited by max. junction temperature. refer to an-1086 for guidelines for measuring v (br)ces safely. r is measured at t j of approximately 90c. electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 1200 v v ge = 0v, i c = 250a ? v (br)ces / ? t j temperature coeff. of breakdown voltage 1 . 2v / c v ge = 0v, i c = 1ma (25c-150c) v ce(on) collector-to-emitter saturation voltage 1.9 2.2 v i c = 20a, v ge = 15v, t j = 25c 2 . 3 i c = 20a, v ge = 15v, t j = 150c v ge(th) gate threshold voltage 3.0 6.0 v v ce = v ge , i c = 600 a ? v ge(th) / ? tj threshold voltage temp. coefficient -16 mv/c v ce = v ge , i c = 600 a (25c - 150c) gfe forward transconductance 22 s v ce = 50v, i c = 20a, pw = 30s i ces collector-to-emitter leakage current 2.0 100 a v ge = 0v, v ce = 1200v 2000 v ge = 0v, v ce = 1200v, t j = 150c v fm diode forward voltage drop 2.8 3.6 v i f = 20a 2 . 5 i f = 20a, t j = 150c i ges gate-to-emitter leakage current 100 na v ge = 30v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge (turn-on) 85 130 i c = 20a q ge gate-to-emitter charge (turn-on) 15 20 nc v ge = 15v q gc gate-to-collector charge (turn-on) 35 50 v cc = 600v e on turn-on switching loss 1060 1300 i c = 20a, v cc = 600v, v ge = 15v e off turn-off switching loss 620 850 j r g = 10 ? , l = 200uh, l s = 150nh, t j = 25c e total total switching loss 1680 2150 energy losses include tail & diode reverse recovery t d(on) turn-on delay time 30 50 i c = 20a, v cc = 600v, v ge = 15v t r rise time 15 30 ns r g = 10 ? , l = 200uh, l s = 150nh, t j = 25c t d(off) turn-off delay time 160 180 t f fall time 80 105 e on turn-on switching loss 1750 i c = 20a, v cc = 600v, v ge =15v e off turn-off switching loss 1120 j r g =10 ? , l=200uh, l s =150nh, t j = 150c e total total switching loss 2870 energy losses include tail & diode reverse recovery t d(on) turn-on delay time 30 i c = 20a, v cc = 600v, v ge = 15v t r rise time 15 ns r g = 10 ? , l = 200uh, l s = 150nh t d(off) turn-off delay time 190 t j = 150c t f fall time 210 c ies input capacitance 1940 pf v ge = 0v c oes output capacitance 120 v cc = 30v c res reverse transfer capacitance 40 f = 1.0mhz t j = 150c, i c = 80a rbsoa reverse bias safe operating area full square v cc = 960v, vp =1200v rg = 10 ? , v ge = +20v to 0v erec reverse recovery energy of the diode 790 j t j = 150c t rr diode reverse recovery time 105 ns v cc = 600v, i f = 20a i rr peak reverse recovery current 40 a v ge = 15v, rg = 10 ? , l =1.0mh, l s = 150nh conditions downloaded from: http:///
irg7ph35udpbf/IRG7PH35UD-EP www.irf.com 3 fig. 2 - maximum dc collector current vs. case temperature fig. 3 - power dissipation vs. case temperature fig. 4 - forward soa t c = 25c, t j 150c; v ge =15v fig. 5 - reverse bias soa t j = 150c; v ge = 20v fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) 10 100 1000 10000 v ce (v) 1 10 100 1000 i c ( a ) 1 10 100 1000 10000 v ce (v) 0.01 0.1 1 10 100 1000 i c ( a ) 10sec 100sec tc = 25c tj = 150c single pulse dc 1msec 0 20 40 60 80 100 120 140 160 t c (c) 0 50 100 150 200 p t o t ( w ) 25 50 75 100 125 150 t c (c) 0 10 20 30 40 50 60 i c ( a ) 0.1 1 10 100 f , frequency ( khz ) 0 5 10 15 20 25 30 35 40 45 l o a d c u r r e n t ( a ) for both: duty cycle : 50% tj = 150c tc = 100c gate drive as specified power dissipation = 70w i square wave: v cc diode as specified downloaded from: http:///
irg7ph35udpbf/IRG7PH35UD-EP 4 www.irf.com fig. 6 - typ. igbt output characteristics t j = -40c; tp = 30s fig. 7 - typ. igbt output characteristics t j = 25c; tp = 30s fig. 8 - typ. igbt output characteristics t j = 150c; tp = 30s fig. 9 - typ. diode forward characteristics tp = 380s fig. 11 - typical v ce vs. v ge t j = 25c fig. 10 - typical v ce vs. v ge t j = -40c 0 2 4 6 8 10 v ce (v) 0 10 20 30 40 50 60 70 80 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 0 2 4 6 8 10 v ce (v) 0 10 20 30 40 50 60 70 80 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 0 2 4 6 8 10 v ce (v) 0 10 20 30 40 50 60 70 80 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 4 8 12 16 20 v ge (v) 1 2 3 4 5 6 7 8 v c e ( v ) i ce = 10a i ce = 20a i ce = 40a 5 1 01 52 0 v ge (v) 1 2 3 4 5 6 7 8 v c e ( v ) i ce = 10a i ce = 20a i ce = 40a 0123456 v f (v) 0 10 20 30 40 50 60 70 80 i f ( a ) -40c 25c 150c downloaded from: http:///
irg7ph35udpbf/IRG7PH35UD-EP www.irf.com 5 fig. 12 - typical v ce vs. v ge t j = 150c fig. 13 - typ. transfer characteristics v ce = 50v, tp = 30s fig. 14 - typ. energy loss vs. i c t j = 150c; l = 680h; v ce = 600v, r g = 10 ? ; v ge = 15v fig. 16 - typ. energy loss vs. r g t j = 150c; l = 680h; v ce = 600v, i ce = 20a; v ge = 15v fig. 17 - typ. switching time vs. r g t j = 150c; l = 680h; v ce = 600v, i ce = 20a; v ge = 15v fig. 15 - typ. switching time vs. i c t j = 150c; l = 680h; v ce = 600v, r g = 10 ? ; v ge = 15v 5 1 01 52 0 v ge (v) 1 2 3 4 5 6 7 8 v c e ( v ) i ce = 10a i ce = 20a i ce = 40a 4567891 0 v ge, gate-to-emitter voltage (v) 0 10 20 30 40 50 60 70 80 i c , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) t j = 150c t j = 25c 0 1 02 03 04 0 i c (a) 0 1000 2000 3000 4000 e n e r g y ( j ) e off e on 0 20 40 60 80 100 r g ( ? ) 500 1000 1500 2000 2500 3000 3500 e n e r g y ( j ) e on e off 0 10 20 30 40 i c (a) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 20 40 60 80 100 r g ( ? ) 10 100 1000 10000 s w i c h i n g t i m e ( n s ) t r td off t f td on downloaded from: http:///
irg7ph35udpbf/IRG7PH35UD-EP 6 www.irf.com fig. 20 - typ. diode i rr vs. di f /dt v cc = 600v; v ge = 15v; i f = 20a; t j = 150c fig. 21 - typ. diode q rr vs. di f /dt v cc = 600v; v ge = 15v; t j = 150c fig. 18 - typ. diode i rr vs. i f t j = 150c fig. 19 - typ. diode i rr vs. r g t j = 150c fig. 22 - typ. diode e rr vs. i f t j = 150c 10 15 20 25 30 35 40 i f (a) 10 20 30 40 50 60 i r r ( a ) r g = 5.0? r g = 10? r g = 100? r g = 47? 0 200 400 600 800 10001200140016001800 di f /dt (a/s) 0 1000 2000 3000 4000 5000 6000 q r r ( c ) 5.0? 10? 100? 47? 20a 40a 10a 10 15 20 25 30 35 40 i f (a) 0 500 1000 1500 2000 e n e r g y ( j ) r g = 5.0 ? r g = 10 ? r g = 47 ? r g = 100 ? fig. 23 - typical gate threshold voltage (normalized) vs. junction temperature 200 400 600 800 1000 1200 1400 1600 di f /dt (a/s) 20 25 30 35 40 45 50 55 i r r ( a ) 0 20 40 60 80 100 r g ( ?) 20 25 30 35 40 45 50 i r r ( a ) 25 50 75 100 125 150 175 t j , temperature (c) 1.0 2.0 3.0 4.0 5.0 v g e ( t h ) , g a t e t h r e s h o l d v o l t a g e ( n o r m a l i z e d ) i c = 600a downloaded from: http:///
irg7ph35udpbf/IRG7PH35UD-EP www.irf.com 7 fig. 23 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz fig. 24 - typical gate charge vs. v ge i ce = 20a; l = 2.4mh fig 25. maximum transient thermal impedance, junction-to-case (igbt) fig. 26. maximum transient thermal impedance, junction-to-case (diode) 0 100 200 300 400 500 600 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres 0 2 04 06 08 01 0 0 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 600v v ces = 400v 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.017 0.0000130.218 0.000141 0.299 0.002184 0.177 0.013107 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.015 0.0000430.235 0.000408 0.281 0.003593 0.130 0.020382 downloaded from: http:///
irg7ph35udpbf/IRG7PH35UD-EP 8 www.irf.com fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit fig.c.t.4 - resistive load circuit fig.c.t.3 - switching loss circuit 0 1k vcc dut l l rg 80 v dut vcc + - l rg vcc dut / driver diode clamp / dut -5v rg vcc dut r = vcc icm g force c sens e 100k dut 0.0075f d1 22k e force c force e sense fig.c.t.5 - bvces filter circuit downloaded from: http:///
irg7ph35udpbf/IRG7PH35UD-EP www.irf.com 9 fig. wf3 - typ. diode recovery waveform @ t j = 150c using fig. ct.4 fig. wf1 - typ. turn-off loss waveform @ t j = 150c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ t j = 150c using fig. ct.4 -100 0 100 200 300 400 500 600 700 800 -0.5 0 0.5 1 1.5 2 time(s) v ce (v) -5 0 5 10 15 20 25 30 35 40 i ce (a) 90% i ce 5% v ce 5% i ce eoff loss tf -100 0 100 200 300 400 500 600 700 800 -0.3 -0.1 0.1 0.3 0.5 time (s) v ce (v) -10 0 10 20 30 40 50 60 70 80 i ce (a) test current 90% test current 5% v ce 10% test current tr eon loss -50 -40 -30 -20 -10 0 10 20 30 -0.25 -0.05 0.15 0.35 0.55 time (s) v f (v) peak i rr t rr e rec 10% peak irr downloaded from: http:///
irg7ph35udpbf/IRG7PH35UD-EP 10 www.irf.com

to-247ac package is not recommended for surface mount application.

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irg7ph35udpbf/IRG7PH35UD-EP www.irf.com 11 ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 02/2010 data and specifications subject to change without notice. this product has been designed and qualified for industrial market. qualification standards can be found on irs web site.

to-247ad package is not recommended for surface mount application.
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